vs-40mt1.0p.pbf, vs -70mt1.0p.pbf, vs-100mt1.0p.pbf series www.vishay.com vishay semiconductors revision: 30-oct-13 1 document number: 94538 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 three phase bridge (power modules), 45 a to 100 a features ?low v f ? low profile package ? direct mounting to heatsink ? flat pin/round pin versions with pcb solderable terminals ? low junction to case thermal resistance ? 3500 v rms insulation voltage ? ul approved file e78996 ? designed and qualified for industrial level ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 applications ? power conversion machines ?welding ?ups ?smps ? motor drives ? general purpose and heavy duty application description a range of extremely compact three-phase rectifier bridges offering efficient and reliable operation. the low profile package has been specifically conceived to maximize space saving and optimize the electrical layout of the application specific power supplies. electrical specifications product summary i o 45 a to 100 a v rrm 1400 v to 1600 v package mt...pa, mt...pb circuit three phase bridge mt...pa mt...pb major ratings and characteristics symbol characteristics values 40mt values 70mt values 100mt units i o 45 75 100 a t c 100 80 80 c i fsm 50 hz 270 380 450 a 60 hz 280 398 470 i 2 t 50 hz 365 724 1013 a 2 s 60 hz 325 660 920 i 2 ? t 3650 7240 10 130 a 2 ? s v rrm 1400 to 1600 v t stg range - 40 to 125 c t j - 40 to 150 voltage ratings type number voltage code reverse voltage v v rrm , maximum repetitive peak reverse voltage v v rsm , maximum non-repetitive peak v i rrm maximum at t j = 150 c ma vs-40mt140p, vs-70mt140p, vs-100mt140p 140 1400 1500 5 vs-40mt160p, vs-70mt160p, vs-100mt160p 160 1600 1700
vs-40mt1.0p.pbf, vs -70mt1.0p.pbf, vs-100mt1.0p.pbf series www.vishay.com vishay semiconductors revision: 30-oct-13 2 document number: 94538 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 forward conduction parameter symbol test conditions 40mt 70mt 100mt units maximum dc output current ? at case temperature i o 120 rect. to conduction angle 45 75 100 a 100 80 80 c maximum peak, one cycle ? forward, non-repe titive on state surge current i fsm t = 10 ms no voltage reapplied initial ? t j = t j maximum 270 380 450 ? t = 8.3 ms 280 398 470 t = 10 ms 100 % v rrm reapplied 225 320 380 t = 8.3 ms 240 335 400 maximum i 2 t for fusing i 2 t t = 10 ms no voltage reapplied 365 724 1013 a 2 s t = 8.3 ms 325 660 920 t = 10 ms 100 % v rrm reapplied 253 512 600 t = 8.3 ms 240 467 665 maximum i 2 ? t for fusing i 2 ? t t = 0.1 ms to 10 ms, no vo ltage reapplied 3650 7240 10 130 a 2 ? s value of threshold voltage v f(to) t j maximum 0.78 0.82 0.75 v slope resistance r t 14.8 9.5 8.1 m ? maximum forward voltage drop v fm t j = 25 c; t p = 400 s single junction ? (40mt, i pk = 40 a) (70mt, i pk = 70 a) (100mt, i pk = 100 a) 1.45 1.45 1.51 v insulation table parameter symbol test cond itions 40mt 70mt 100mt units rms insulation voltage v ins t j = 25 c, all terminal shorted, f = 50 hz, t = 1 s 3500 v thermal and mechanical specifications parameter symbol test conditions 40mt 70mt 100mt units maximum junction operating ? temperature range t j - 40 to 150 c maximum storage ? temperature range t stg - 40 to 125 maximum thermal resistance, ? junction to case r thjc dc operation per module 0.27 0.23 0.19 k/w dc operation per junction 1.6 1.38 1.14 120 rect. condunction angl e per module 0.38 0.29 0.22 120 rect. condunction angl e per junction 2.25 1.76 1.29 maximum thermal resistance, ? case to heatsink per module r thcs mounting surface smooth, flat and greased ? heatsink compound thermal conductivity = 0.42 w/mk 0.1 mounting torque to heatsink ? 10 % a mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. ? lubricated threads 4nm approximate weight 65 g clearance and creepage distances parameter test conditio ns mt...pa mt...pb units clearance external shortest distance s in air between terminals ? which are not internally short circui ted together 10.9 12.3 mm creepage distance shortest distance along external su rface of the insulating material ? between terminals which are not in ternally short ci rcuited together
vs-40mt1.0p.pbf, vs -70mt1.0p.pbf, vs-100mt1.0p.pbf series www.vishay.com vishay semiconductors revision: 30-oct-13 3 document number: 94538 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - current rating characteristics fig. 2 - on-state voltage drop chracteristics fig. 3 - maximum non-re petitive surge current fig. 4 - maximum non-re petitive surge current fig. 5 - current rating nomogram (1 module per heatsink) total output current (a) maximum allowable case temperature (c) 80 90 100 110 120 130 140 150 160 0 1020304050 120? (rect) 40mt...p r (dc) = 0.27 k/w per module thjc instantaneous on-state current (a) instantaneous on-state voltage (v) 1 10 100 1000 0123456 tj = 150?c tj = 25?c 40mt...p number of equal amplitude half cycle current pulses (n) peak half sine wave on-state current (a) 50 100 150 200 250 110100 at any rated load condition and with rated vrrm applied following surge. initial tj = 150?c @ 60 hz 0.0083 s @ 50 hz 0.0100 s 40mt...p per junction pulse train duration(s) peak half sine wave on-state current (a) 50 100 150 200 250 300 0.01 0.1 1 maximum non repetitive surge current versus pulse train duration. control of conduction may not be maintained. initial t j = 150?c no voltage reapplied rated v rrm reapplied 40mt...p per junction maximum allowable ambient temperature (c) total output current (a) maximum total power loss (w) 0 30 60 90 120 150 rthsa = 0.1 k/w - delta r 0.3 k/w 0.4 k/w 0.5 k/w 1 k/w 0.2 k/w 0 50 100 150 200 250 0 102030405060 120? (rect) tj = 150?c 40mt...p
vs-40mt1.0p.pbf, vs -70mt1.0p.pbf, vs-100mt1.0p.pbf series www.vishay.com vishay semiconductors revision: 30-oct-13 4 document number: 94538 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 6 - current rating characteristics fig. 7 - on-state volt age drop characteristics fig. 8 - maximum non-re petitive surge current fig. 9 - maximum non-re petitive surge current fig. 10 - current rating nomo gram (1 module per heatsink) total output current (a) maximum allowable case temperature (c) 60 70 80 90 100 110 120 130 140 150 160 0 1020304050607080 120? (rect) 70mt...p r (dc) = 0.23 k/w per module thjc instantaneous on-state current (a) instantaneous on-state voltage (v) 1 10 100 1000 012345 tj = 150?c tj = 25?c 70mt...p number of equal amplitude half cycle current pulses (n) peak half sine wave on-state current (a) 100 150 200 250 300 350 110100 at any rated load condition and with rated vrrm applied following surge. initial tj = 150?c @ 60 hz 0.0083 s @ 50 hz 0.0100 s 70mt...p per junction pulse train duration(s) peak half sine wave on-state current (a) 50 100 150 200 250 300 350 400 0.01 0.1 1 maximum non repetitive surge current versus pulse train duration. control of conduction may not be maintained. initial t j = 150?c no voltage reapplied rated v rrm reapplied 70mt...p per junction maximum allowable ambient temperature (c) total output current (a) maximum total power loss (w) 0306090120150 rths a = 0.1 k/w - delta r 0.3 k/w 0.4 k/w 0.5 k/w 1 k/w 0.2 k/w 0 50 100 150 200 250 300 020406080 120? (rect) tj = 150?c 70mt...p
vs-40mt1.0p.pbf, vs -70mt1.0p.pbf, vs-100mt1.0p.pbf series www.vishay.com vishay semiconductors revision: 30-oct-13 5 document number: 94538 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 11 - current rating characteristics fig. 12 - on-state volt age drop characteristics fig. 13 - maximum non- repetitive surge current fig. 14 - maximum non- repetitive surge current fig. 15 - current rating nomo gram (1 module per heatsink) total output current (a) maximum allowable case temperature (c) 40 60 80 100 120 140 40 50 60 70 80 90 100 110 120 130 120? (rect) per module 100mt...p r (dc) = 0.19 k/w thjc instantaneous on-state current (a) instantaneous on-state voltage (v) 1 10 100 1000 0.5 1 1.5 2 2.5 3 3.5 4 tj = 150?c tj = 25?c 100mt...p number of equal amplitude half cycle current pulses (n) peak half sine wave on-state current (a) 100 150 200 250 300 350 400 110100 at any rated load condition and with rated vrrm applied following surge. initial tj = 125?c @ 60 hz 0.0083 s @ 50 hz 0.0100 s 100mt...p per junction pulse train duration(s) peak half sine wave on-state current (a) 0 50 100 150 200 250 300 350 400 450 500 0.01 0.1 1 10 maximum non repetitive surge current versus pulse train duration. control initial t j = 125?c no voltage reapplied rated v rrm reapplied of conduction may not be maintained. 100mt...p per junction maximum allowable ambient temperature (c) total output current (a) maximum total power loss (w) 0 30 60 90 120 150 0.05 k/w rthsa = 0.025 k/w - delta r 0.5 k/w 1 k / w 0.3 k/ w 0.2 k/w 0.1 k/w 0 100 200 300 400 500 020406080100 120? (rect) tj = 150?c 100mt...p
vs-40mt1.0p.pbf, vs -70mt1.0p.pbf, vs-100mt1.0p.pbf series www.vishay.com vishay semiconductors revision: 30-oct-13 6 document number: 94538 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 16 - thermal impedance z thjc characteristics ordering information table circuit configuration square wave pulse duration (s) transient thermal impedance z thjc (k/w) 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 steady state value rthjc per junction = 1.6 k/w (40mt...p) 1.38 k/w (70mt...p 1.14 k/w (100mt...p) dc operation) 40mt...p 70mt...p 100mt...p 2 - current rating code 3 - circuit configuration code: 0 = 3-phase rectifier bridge 4 - essential part number 5 - voltage code x 10 = v rrm (see voltage ratings table) 6 - pinout code 4 = 45 a 7 = 75 a 10 = 100 a 7 - lead (pb)-free a = flat pins b = round pins device code 6 2 1 4 3 5 7 10 0 mt 160 p b pbf 1 vs- - vishay semiconductors product links to related documents dimensions www.vishay.com/doc?95244
document number: 95244 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 07-nov-07 1 mtp flat and round pin outline dimensions vishay semiconductors dimensions for mtp with flat pin in millimeters 4 2.5 42 0.1 7 14 2 44.5 7 7 7 7 7.4 ? 5.2 (x 2) 4 3 2 1 5 7 1.3 14 14 39.5 48.7 63.5 0.25 32.5 0.5 27.5 22 22 0.5 5.5 ? 5 16 12 0.5 10.5 5.5 0.5 electrical circuit 3, 4 5 6 7 1, 2 6 12
www.vishay.com for technical questions, contact: indmodules@vishay.com document number: 95244 2 revision: 07-nov-07 outline dimensions vishay semiconductors mtp flat and round pin dimensions for mtp with round pin in millimeters 44.5 32.5 0.1 27.5 22 1.3 14 14 39.5 48.7 63.5 0.25 electrical circuit 3, 4 5 6 7 1, 2 7 7 7 7 4 3 2 1 5 7 ? 5.2 (x 2) 7.4 10.5 4 ? 5 ? 1.1 12 0.5 16 31.8 12 2.5 4 ? 5 14 7 7 6 20.5 0.1
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